Very High Density (>1014 cm−2) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures
Abstract
High hole densities are desired in p‐channel field effect transistors to improve the speed and on‐currents. Building on the recently discovered undoped, polarization‐induced GaN/AlN 2D hole gas (2DHG), this work demonstrates the tuning of the piezoelectric polarization difference across the heterointerface by introducing indium in the GaN channel. Using careful design and epitaxial growths, these pseudomorphic (In)GaN/AlN heterostructures result in some of the highest carrier densities of >1014 cm−2 in a III‐nitride heterostructure—just an order below the intrinsic crystal limit of ≈1015 cm−2. These ultra‐high density InGaN/AlN 2DHGs show room temperature mobilities of 0.5–4 cm2 V−1 s−1 and do not freeze out at low temperatures. A characteristic alloy fluctuation energy of 1.0 eV for hole scattering in InGaN alloy is proposed based on the experiments.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 05, 2022
- Source ID
- 10.1002/aelm.202101120
Entities
People
- Debdeep Jena
- Huili Grace Xing
- Reet Chaudhuri
- Zexuan Zhang
Organizations
- Air Force Office of Scientific Research
- Cornell University
- National Science Foundation