Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films
Abstract
This work characterizes the structural, magnetic, and ferroelectric properties of epitaxial LuFeO3 orthoferrite thin films with different Lu/Fe ratios. LuFeO3 thin films are grown by pulsed laser deposition on SrTiO3 substrates with Lu/Fe ratio ranging from 0.6 to 1.5. LuFeO3 is antiferromagnetic with a weak canted moment perpendicular to the film plane. Piezoresponse force microscopy imaging and switching spectroscopy reveal room temperature ferroelectricity in Lu‐rich and Fe‐rich films, whereas the stoichiometric film shows little polarization. Ferroelectricity in Lu‐rich films is present for a range of deposition conditions and crystallographic orientations. Positive‐up‐negative‐down ferroelectric measurements on a Lu‐rich film yield ≈13 µC cm−2 of switchable polarization, although the film also shows electrical leakage. The ferroelectric response is attributed to antisite defects analogous to that of Y‐rich YFeO3, yielding multiferroicity via defect engineering in a rare earth orthoferrite.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2023
- Source ID
- 10.1002/aelm.202300059
Entities
People
- Allison Kaczmarek
- Caroline Anne Ross
- Eunsoo Cho
- Konstantin Klyukin
- Tingyu Su
Organizations
- Auburn University
- Massachusetts Institute of Technology
- National Science Foundation
- United States Department of Defense