A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device
Abstract
With the advent of artificial intelligence (AI) in computational devices technology, various synaptic array architectures are proposed for neuromorphic computing applications. Among them, the non‐volatile memory (NVM) architectures are very promising for their small cell size, ultra‐low energy consumption, and capability for large parallel data processing through 3D configurations capable of multilevel signal processing. Herein, the viability of such magnetic tunnel junction (MTJ)‐based synaptic devices via fabrication and characterization of multi‐junction spintronic devices is demonstrated, with the experimental results supported through micromagnetic simulations.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 04, 2020
- Source ID
- 10.1002/aisy.202000143
Entities
People
- Hong Chen
- Jeffrey Bokor
- Jeongmin Hong
- Long You
- Nuo Xu
- Sakhrat Khizroev
- Stefano Cabrini
- Xin Li
Organizations
- Air Force Office of Scientific Research
- Foshan University
- Huazhong University of Science and Technology
- Lawrence Berkeley National Laboratory
- National Natural Science Foundation of China
- National Science Foundation
- University of Miami