Formation of BiFeO3 from a Binary Oxide Superlattice Grown by Atomic Layer Deposition
Abstract
We report on the growth of polycrystalline BiFeO3 thin films on SiO2/Si(001) and Pt(111) substrates by atomic layer deposition using the precursors ferrocene, triphenyl‐bismuth, and ozone. By growing alternating layers of Fe2O3 and Bi2O3, we employ a superlattice approach and demonstrate an efficient control of the cation stoichiometry. The superlattice decay and the resulting formation of polycrystalline BiFeO3 films are studied by in situ X‐ray diffraction, in situ X‐ray photoelectron spectroscopy, and transmission electron microscopy. No intermediate ternary phases are formed and BiFeO3 crystallization is initiated in the Bi2O3 layers at 450 °C following the diffusion‐driven intermixing of the cations. Our study of the BiFeO3 formation provides an insight into the complex interplay between microstructural evolution, grain growth, and bismuth oxide evaporation, with implications for optimization of ferroelectric properties.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 20, 2017
- Source ID
- 10.1002/cphc.201700407
Entities
People
- Aleksandr V. Plokhikh
- Alexander L. Vasiliev
- Andrew R. Akbashev
- Igor A. Karateev
- Jonathan E Spanier
- Matthias Falmbigl
- Mikhail Y. Presnyakov
- И. С. Головина
Organizations
- Drexel University
- Institute of Semiconductor Physics
- National Research Centre Kurchatov Institute
- National Science Foundation
- Office of Naval Research