AlGaAs/Si dual‐junction tandem solar cells by epitaxial lift‐off and print‐transfer‐assisted direct bonding
Abstract
A novel method is developed to realize a III‐V/Si dual‐junction photovoltaic cell by combining epitaxial lift‐off (ELO) and print‐transfer‐assisted bonding methods. The adoption of ELO enables III‐V wafers to be recycled and reused, which can further lower the cost of III‐V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer‐thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual‐junction tandem solar cells have been fabricated and exhibit decent performance.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 04, 2018
- Source ID
- 10.1002/ese3.182
Entities
People
- Dong Liu
- Hao‐chih Yuan
- Hongyi Mi
- Jae Cheol Shin
- Kanglin Xiong
- Meng‐yin Wu
- Michael S Arnold
- Shaoqin Gong
- Tzu‐hsuan Chang
- Weidong Zhou
- Xin Yin
- Xiuling Li
- Xudong Wang
- Zhenqiang Ma
- Zhenyang Xia
Organizations
- Air Force Office of Scientific Research
- National Renewable Energy Laboratory
- University of Illinois Urbana–Champaign
- University of Texas at Arlington
- University of Wisconsin–Madison
- Yeungnam University