Full band Monte Carlo simulation of AlInAsSb digital alloys
Abstract
Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure‐related mechanisms that influence impact ionization. Band‐structures calculated using an empirical tight‐binding method and Monte Carlo simulations reveal that the mini‐gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 27, 2020
- Source ID
- 10.1002/inf2.12112
Entities
People
- Andrew K. Jones
- Ann Kathryn Rockwell
- Avik W. Ghosh
- Jiyuan Zheng
- Joe C. Campbell
- Seth R. Bank
- Sheikh Z. Ahmed
- Stephen D. March
- Yaohua Tan
- Yuan Yuan
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- Synopsys
- University of Texas at Austin
- University of Virginia