Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon
Abstract
A semiconductor optical amplifier at 2.0‐µm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP‐based active region to a silicon substrate. It is therefore compatible with low‐cost and high‐volume fabrication infrastructures, and can be efficiently coupled to other active and passive devices in a photonic integrated circuit. On‐chip gain larger than 13 dB is demonstrated at 20 °C, with a 3‐dB bandwidth of ∼75 nm centered at 2.01 µm. No saturation of the gain is observed for an on‐chip input power up to 0 dBm, and on‐chip gain is observed for temperatures up to at least 50 °C. This technology paves the way to chip‐level applications for optical communication, industrial or medical monitoring, and non‐linear optics. image
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 28, 2017
- Source ID
- 10.1002/lpor.201600165
Entities
People
- Alexander Spott
- Eric J. Stanton
- I. Vurgaftman
- Jerry R. Meyer
- John E. Bowers
- Jon D. Peters
- Lin Chang
- Michael L. Davenport
- Nicolas Volet
- Travis C. Briles
Organizations
- Defense Advanced Research Projects Agency
- National Institute of Standards and Technology
- Office of Naval Research Global
- Swiss National Science Foundation
- United States Naval Research Laboratory
- University of California, Santa Barbara