Nonlinear Optical Signatures of the Transition from Semiconductor to Semimetal in PtSe2
Abstract
The demand for an ultrabroad optical material with a bandgap tunable from zero to at least 1–2 eV has been one of the driving forces for exploring new 2D materials since the emergence of graphene, transition metal dichalcogenides, and black phosphorus. As an ultra‐broadband 2D material with energy bandgap ranging from 0 to 1.2 eV, PtSe2 shows much better air stability than its analogue, black phosphorous. In this work, the superior nonlinear optical performance and ultrafast dynamics of layered PtSe2, and signatures of the transition from semiconductor to semimetal are systematically studied. Combining with rate equations, first‐principles calculation, and electrical measurements, a comprehensive understanding about the evolution of nonlinear absorption and carrier dynamics with increasing layer thickness is provided, indicating its promising potential in nanophotonic devices such as infrared detectors, optical switches, and saturable absorbers.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 08, 2019
- Source ID
- 10.1002/lpor.201900052
Entities
People
- Ivan M. Kislyakov
- Jean‐michel Nunzi
- Jiawei Huang
- Jun Wang
- Lei Wang
- Long Zhang
- Niall McEvoy
- Ningning Dong
- Saifeng Zhang
- Xiaoyan Zhang
- Yafeng Xie
- Yi‐yang Sun
Organizations
- Chinese Academy of Sciences
- Intelligence Community Postdoctoral Research Fellowship Program
- National Natural Science Foundation of China
- Natural Science Foundation of Shanghai
- Queen's University
- Science Foundation Ireland
- Shanghai Institute of Ceramics
- Trinity College Dublin
- University of Chinese Academy of Sciences
- Youth Innovation Promotion Association