Properties of post‐annealed ZnO films grown with O3
Abstract
The properties of ZnO thin films grown with ozone are examined. Annealing studies were performed on ZnO films grown by pulsed‐laser deposition using either O2 and an O2/O3 gas mixture as the oxidant. The carrier density of ZnO films grown with pure O2 generally decreases upon annealing in 1 atm O2. In contrast, the n‐type carrier density for ZnO films grown with O2/O3 mixture gas increased with O2 annealing. The results indicate that acceptor states, created via growth in ozone, are annihilated with post‐annealing. This suggests that the ozone‐related acceptor states are metastable. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 01, 2008
- Source ID
- 10.1002/pssa.200824015
Entities
People
- D. P. Norton
- F. Lugo
- F. Ren
- H. S. Kim
- S. J. Pearton
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation
- United States Department of Energy