Laterally overgrown GaN/InGaN multi‐quantum well heterostructures: Electrical and optical properties
Abstract
Multi‐quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum‐mechanical simulation of the grown heterostructures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 01, 2010
- Source ID
- 10.1002/pssa.200983413
Entities
People
- A. Y. Polyakov
- Alexander Markov
- Anatoliy Govorkov
- Haeng‐keun Ahn
- In‐Hwan Lee
- N. B. Smirnov
- Sergey Karpov
- Stephen Pearton
Organizations
- Army Research Office
- Russian Center for Science Information