Stress test measurements of lattice‐matched InAlN/AlN/GaN HFET structures
Abstract
InAlN/GaN heterostructures offer some benefits over existing AlGaN/GaN heterostructures for HFET device applications. In addition to having a larger bandgap than typical AlGaN compounds used in HFET devices (with Al 12 cm−2. We propose that the degradation is attributable to the buildup of hot phonons since the degradation rates as a function of electron density generally follow the hot phonon lifetime versus electron density. This provides evidence that hot phonons have a significant role in device degradation and there exists an optimal 2DEG density to minimize hot phonon related degradation. We did not observe any correlation between the degradation rate and the gate leakage.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 01, 2010
- Source ID
- 10.1002/pssa.200983556
Entities
People
- Arvydas Matulionis
- E. Šermukšnis
- Hadis Morkoç
- Hailing Cheng
- Jacob H. Leach
- Juozas Liberis
- Mo Wu
- Xianfeng Ni
- Xing Li
- Yong‐tae Moon
- Çağlıyan Kurdak
- Ümit Özgür
Organizations
- Air Force Office of Scientific Research