Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design
Abstract
The role of spontaneous and piezoelectric polarization in III–V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 08, 2011
- Source ID
- 10.1002/pssa.201001189
Entities
People
- Albert (kejia) Wang
- Chuanxin Lian
- Debdeep Jena
- Guowang Li
- Huili Xing
- Jai Verma
- John Simon
- Kamal Karda
- Kevin Goodman
- Patrick Fay
- Satyaki Ganguly
- Thomas Kosel
- Vladimir Protasenko
- Yu Cao
Organizations
- Air Force Office of Scientific Research
- Defense Advanced Research Projects Agency
- National Science Foundation
- Office of Naval Research