Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment
Abstract
A sharp contrast of the density and size of Ga metal droplets (MDs) on strip patterned GaAs (100) is demonstrated through droplet epitaxy (DE) and photolithography technique. As clearly evidenced by scanning electronic microscope (SEM) and atomic force microscope (AFM), MD density between etched (patterned) and un‐etched (un‐patterned) surfaces can be sharply different up to one order of magnitude under an identical growth condition. Etched surface exhibits much higher density and smaller diameter and height of MDs.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 05, 2012
- Source ID
- 10.1002/pssa.201127692
Entities
People
- Eun‐soo Kim
- Gregory J. Salamo
- Ji Hoon Lee
- Jiang Wu
- Ming‐yu Li
- Sangmin Song
- Sang‐mo Koo
- Yusuke Hirono
- Zhiming Wang
Organizations
- National Research Foundation
- National Science Foundation
- Office of Naval Research