Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 02, 2016
- Source ID
- 10.1002/pssa.201532570
Entities
People
- Andrew D. Koehler
- Bradford B. Pate
- Charles. R. Eddy Jr.
- Fritz J. Kub
- Jennifer K Hite
- Karl D. Hobart
- Marko J. Tadjer
- Tatyana I. Feygelson
- Travis J. Anderson
- Virginia D. Wheeler
Organizations
- Office of Naval Research