Electron irradiation of near‐UV GaN/InGaN light emitting diodes
Abstract
Irradiation with 6 MeV electrons of near‐UV (peak wavelength 385–390 nm) multi‐quantum‐well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near Ec−0.8 and Ec−1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 × 1016 cm−2. The likely origin of the EL efficiency decrease is this increase in concentration of the Ec −0.8 eV and Ec −1 eV traps.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 21, 2017
- Source ID
- 10.1002/pssa.201700372
Entities
People
- A. Y. Polyakov
- E. I. Shabunina
- Han‐su Cho
- I. V. Shchemerov
- In‐Hwan Lee
- N. A. Tal'nishnih
- N. B. Smirnov
- N. M. Shmidt
- R. A. Zinovyev
- S. I. Didenko
- S. J. Pearton
- Sung‐Min Hwang
- П. Б. Лагов
Organizations
- Defense Threat Reduction Agency
- Ioffe Institute
- Korea University
- Ministry of Education and Science of the Russian Federation
- National Research Foundation of Korea
- National University of Science and Technology
- University of Florida