Influence of Defects on the Schottky Barrier Height at BaTiO3/RuO2 Interfaces
Abstract
The Schottky barrier formation between polycrystalline acceptor‐doped BaTiO3 and high work function RuO2 is studied using photoelectron spectroscopy. Schottky barrier heights for electrons of ≈1.4 eV are determined, independent of doping level and oxygen vacancy concentration of the substrates. The insensitivity of the barrier height is related to the high permittivity of BaTiO3, which results in space‐charge regions (SCRs) being considerably wider than the inelastic mean free path of the photoelectrons. SCRs at any kind of interface should, therefore, be more important for the electronic and ionic conductivities in BaTiO3 than in materials with lower permittivity. A Ba‐rich phase at the surface of reduced acceptor‐doped BaTiO3 is also identified, which is explained by the formation of Ti vacancies in the 2D electron gas region at the surface.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 06, 2021
- Source ID
- 10.1002/pssa.202100143
Entities
People
- Andreas Klein
- Hui Ding
- Jean-christophe Jaud
- Jurij Koruza
- Katharina N. S. Schuldt
Organizations
- Air Force Office of Scientific Research
- Hessian Ministry for Science and the Arts
- Technical University of Darmstadt