Monolithic Passive−Active Integration of Epitaxially Grown Quantum Dot Lasers on Silicon
Abstract
Quantum dot (QD) lasers epitaxially grown on Si have already been demonstrated to show record low threshold, high temperature tolerance, and low feedback sensitivity. When grown on the silicon photonic chip and integrated with Si waveguides (WGs), QD lasers offer considerable economical and foundry‐scalable solutions to on‐chip light sources. Yet, a technology that enables both growth and integration of QD lasers on a silicon photonic chip has not been demonstrated. Herein, a novel device platform which enables integration of the QD active region with passive WG structures is designed. By doing so, complex and high‐performance lasers such as distributed Bragg reflector lasers, mode‐locked lasers, and sampled grating distributed Bragg reflector tunable lasers are demonstrated in this platform. The same laser epitaxial stack can be easily grown on the substrate of a silicon photonic chip to allow light coupling from QD laser cavities to the silicon WGs.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 17, 2021
- Source ID
- 10.1002/pssa.202100522
Entities
People
- Chen Shang
- John E. Bowers
- Justin Norman
- Kaiyin Feng
- Rosalyn Koscica
- Zeyu Zhang
Organizations
- Defense Advanced Research Projects Agency
- University of California, Santa Barbara