Ballistic Injection Terahertz Plasma Instability in Graphene n+–i–n–n+ Field‐Effect Transistors and Lateral Diodes
Abstract
The operation of the graphene n+–i–n–n+ field‐effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n‐region is analyzed. The momentum transfer of the injected ballistic electrons can lead to an effective Coulomb drag of the quasiequilibrium electrons in the n‐region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 16, 2021
- Source ID
- 10.1002/pssa.202100694
Entities
People
- Akira Satou
- Maxim Ryzhii
- Michael S. Shur
- Taiichi Otsuji
- V. Ryzhii
- Vladimir Mitin
Organizations
- Japan Society for the Promotion of Science
- Office of Naval Research
- Rensselaer Polytechnic Institute
- Tohoku University
- University at Buffalo
- University of Aizu