Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation
Abstract
For utilization in environments where radiation causes concern, a material's photogeneration coefficient proves essential for device designers. To extract this parameter for gallium oxide, which exhibits higher breakdown voltage characteristics compared with other commonly used semiconductor materials, making it desirable for high‐power applications, Schottky diodes receive high‐dose‐rate radiation from an electron linear accelerator. Monitoring photogenerated charge versus dose rate reveals a photogeneration coefficient of 2.4 × 1015 pairs (cm−3‐rad(Si)−1) for epitaxially grown β‐phase gallium oxide.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 09, 2022
- Source ID
- 10.1002/pssa.202100700
Entities
People
- Debdeep Jena
- Dobrin P. Bossev
- Hemant Ghadi
- Huili Grace Xing
- Jeff Titus
- Kazuki Nomoto
- Kevin Goodman
- Matthew J. Gadlage
- Matthew R. Halstead
- Robert M Cooper
- Sam Mchenry
- Steve Ringel
- Wenshen Li
Organizations
- Air Force Office of Scientific Research
- Cornell University
- Johns Hopkins University
- Naval Surface Warfare Center
- Ohio State University