Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy
Abstract
A comprehensive energy map as a function of AlGaN composition over the whole alloy range is presented for commonly observed point defects in nominally intrinsic, n‐, and p‐doped material. The map covers intentional and unintentional impurities (CN, MgIII), vacancies (VIII, VN), passivating complexes (H), and self‐compensating complexes. The tracking of these defects is crucial to understand their impact on optical and electrical properties as well as for their mitigation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 09, 2022
- Source ID
- 10.1002/pssa.202200390
Entities
People
- Ji Hyun Kim
- Pegah Bagheri
- Pramod Reddy
- Ramón Collazo
- Ronny Kirste
- Zlatko Sitar
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation
- North Carolina State University