Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ‐Ga2O3 Due to Interfacing with β‐Ga2O3 Template Layers
Abstract
Heteroepitaxial κ‐Ga2O3 films grown by metal–organic chemical vapor deposition (MOCVD) are found to have superior materials and electrical properties thanks to the interfacing with a β‐Ga2O3 template layer. κ‐Ga2O3 grown on sapphire has not been able to demonstrate its full potential due to materials imperfections created by strain induced by the lattice mismatch at the interface between the epilayer and the substrate. By adopting a β‐Ga2O3 template on a c‐sapphire substrate, higher quality κ‐Ga2O3 thin films are obtained, as evidenced by a smoother surface morphology, narrower X‐ray diffraction (XRD) peaks, and superior electrical performance. The implications of this phenomenon, caused by β‐Ga2O3 buffer layer, are already very encouraging for both boosting current device performance and opening up the perspective of novel applications for Ga2O3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 15, 2023
- Source ID
- 10.1002/pssa.202200559
Entities
People
- David J. Rogers
- Eric V. Sandana
- Ferechteh H. Teherani
- Junhee Lee
- Lakshay Gautam
- Manijeh Razeghi
- Philippe Bove
Organizations
- Air Force Research Laboratory
- Northwestern University