2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC
Abstract
Aluminum nitride (AlN) offers novel potential for electronic integration and performance benefits for high‐power, millimeter‐wave amplification. Herein, load‐pull power performance at 30 and 94 GHz for AlN/GaN/AlN high‐electron‐mobility transistors (HEMTs) on silicon carbide (SiC) is reported. When tuned for peak power‐added efficiency (PAE), the reported AlN/GaN/AlN HEMT shows PAE of 25% and 15%, with associated output power () of 2.5 and 1.7 W mm−1, at 30 and 94 GHz, respectively. At 94 GHz, the maximum generated is 2.2 W mm−1, with associated PAE of 13%.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 27, 2023
- Source ID
- 10.1002/pssa.202200774
Entities
People
- Austin Hickman
- Debdeep Jena
- Huili Grace Xing
- James C. M. Hwang
- K. Shinohara
- Kazuki Nomoto
- Lei Li
- Matthew Guidry
- Michael Elliott
- Neil A. Moser
- Reet Chaudhuri
Organizations
- Air Force Office of Scientific Research
- Cornell University
- National Science Foundation
- Semiconductor Research Corporation
- Teledyne Technologies
- University of California, Santa Barbara