Hexagonal boron nitride as a cationic diffusion barrier to form a graded band gap perovskite heterostructure

Abstract

We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h‐BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3−xBrx on CH3NH3SnI3 without cation mixing.

Document Details

• Document Type: Pub Defense Publication
• Publication Date: Sep 23, 2016
• Source ID: 10.1002/pssb.201600234

Entities

People

• Alex Zettl
• Onur Ergen
• Sally Turner
• Stephen Matthew Gilbert

Organizations

• Lawrence Berkeley National Laboratory
• National Science Foundation
• United States Department of Energy
• University of California, Berkeley

Tags

Fields of Study

• Materials science

Readers

• Materials Science and Engineering.
• Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
• Surface Engineering/Surface Coating Technology.