III‐Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes
Abstract
This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III‐nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE‐related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 21, 2019
- Source ID
- 10.1002/pssb.201800589
Entities
People
- A. Y. Polyakov
- In‐Hwan Lee
- Stephen Pearton
- Taehwan Kim
Organizations
- Korea University
- Ministry of Trade, Industry and Energy
- National University of Science and Technology
- University of Florida