Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures
Abstract
Large‐area growth of polarization‐induced 2D hole gases (2DHGs) in a GaN/AlN heterostructure using molecular beam epitaxy (MBE) is demonstrated. A study of the effect of metal fluxes and substrate temperature during growth is conducted to optimize the 2DHG transport. These conditions are adopted for the growth on 2 in. wafer substrates. The obtained results represent a step forward towards achieving a GaN/AlN 2DHG platform for high‐performance wide‐bandgap p‐channel field effect transistors (FETs).
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 15, 2020
- Source ID
- 10.1002/pssb.201900567
Entities
People
- David A. Muller
- Debdeep Jena
- Huili Grace Xing
- Reet Chaudhuri
- Samuel James Bader
- Zhen Chen
Organizations
- Air Force Office of Scientific Research
- Cornell University
- Intel Corporation
- National Science Foundation