Oxide‐Based Optoelectronics
Abstract
Integrated Si photonics has the potential to revolutionize the processing of information between different integrated chips, as well as within a single chip itself. By performing at least a part of the task with photons rather than electrons, new opportunities for broad‐band low‐power communication and computing are created. Herein, the theoretical description of the linear electro‐optic (EO), or Pockels, effect and a newly elucidated design rule for materials evaluation is summarized. Possible applications of Si‐integrated optical elements based on perovskite oxides and their heterostructures are also discussed. In particular, the Pockels effect in BaTiO3 films grown on Si and intersubband transitions in Si‐integrated perovskite quantum wells (QWs) is described.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 02, 2021
- Source ID
- 10.1002/pssb.202000497
Entities
People
- Alexander A Demkov
- Ali Hamze
- J. Elliott Ortmann
- Marc Reynaud
- Patrick Ponath
- Wente Li
Organizations
- Air Force Office of Scientific Research
- University of Texas at Austin