All‐epitaxial fabrication of a nanowire plasmon laser structure

Abstract

An all‐epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an aluminum plasmonic metal/SiNx dielectric/InGaN quantum well shell surrounding a p‐GaN nanowire core. Strong UV luminescence was observed from as‐grown vertically‐aligned arrays as well as horizontally‐aligned nanowires transferred to a transparent carrier wafer. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 01, 2014
Source ID
10.1002/pssc.201300539

Entities

People

  • Charles. R. Eddy Jr.
  • Jaime A. Freitas
  • Jennifer K Hite
  • Michael A. Mastro

Organizations

  • Office of Naval Research

Tags

Fields of Study

  • Physics

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing