Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms
Abstract
Integration of ultracompact light sources on silicon platforms is regarded as a crucial requirement for various nanophotonic applications. In this work, InGaAs/InP core/shell nanowire array photonic crystal lasers are demonstrated on silicon‐on‐insulator substrates by selective‐area epitaxy. 9 × 9 square‐lattice nanowires forming photonic crystal cavities with a footprint of only 3.0 × 3.0 μm2, and a high Q factor of 23 000 are achieved by forming these nanowires on two‐dimensional silicon gratings. Room‐temperature lasing is observed from a fundamental band‐edge mode at 1290 nm, which is the O‐band of the telecommunication wavelength. Optimized growth templates and effective in‐situ passivation of InGaAs nanowires enable the nanowire array to lase at a low threshold of 200 μJ cm−2, without any signature of heating or degradation above the threshold. These results represent a meaningful step toward ultracompact and monolithic III–V lasers on silicon photonic platforms.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 27, 2018
- Source ID
- 10.1002/pssr.201800489
Entities
People
- Diana L. Huffaker
- Hyunseok Kim
- Ting‐yuan Chang
- Wook‐jae Lee
Organizations
- Air Force Office of Scientific Research
- Cardiff University
- Electronics and Telecommunications Research Institute
- University of California, Los Angeles