Stark‐Localization‐Limited Franz–Keldysh Effect in InAlAs Digital Alloys
Abstract
The optical absorption characteristics of the InAlAs digital alloy semiconductor are investigated. The external quantum efficiency of the InAlAs digital alloy is compared with that of the In0.52Al0.48As random alloy. Unlike the random alloy, the digital alloy exhibits electric‐field‐induced Stark localization, which increases the optical absorption and suppresses the Franz–Keldysh red shift of the optical absorption edge.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 12, 2019
- Source ID
- 10.1002/pssr.201900272
Entities
People
- Andrew H. Jones
- Ann Kathryn Rockwell
- Jiyuan Zheng
- Joe C. Campbell
- Keye Sun
- Seth R. Bank
- Stephen D. March
- Yang Shen
- Yuan Yuan
Organizations
- Army Research Office
- Defense Advanced Research Projects Agency
- University of Texas at Austin
- University of Virginia