Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates
Abstract
Heteroepitaxial crystallographic tilt has been investigated as a possible strain‐relief mechanism in Al‐rich (Al>50%) AlGaN heteroepitaxial layers grown on single‐crystal (0001) AlN substrates with varying miscuts from 0.05° to 4.30°. The magnitude of the elastic lattice deformation‐induced tilt increases monotonically with the miscut angle, tightly following the Nagai tilt model. Although tilt angles as high as 0.1° are recorded, reciprocal space mapping (RSM) broadening and wafer bow measurements do not show any significant changes as a function of the heteroepitaxial tilt angle. While crystallographic tilting has been shown to be effective in controlling strain in some other heteroepitaxial systems, it does not provide any appreciable strain relief of the compressive strain in AlGaN/AlN heteroepitaxy.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 25, 2022
- Source ID
- 10.1002/pssr.202200323
Entities
People
- James Tweedie
- Milena B. Graziano
- Ramón Collazo
- Ronny Kirste
- Seiji Mita
- Shashwat Rathkanthiwar
- Zlatko Sitar
Organizations
- National Science Foundation
- North Carolina State University
- United States Army Research Laboratory