Ultra‐Long Lifetimes of Single Quantum Emitters in Monolayer WSe2/hBN Heterostructures
Abstract
Here, ultra‐long lifetimes of defect‐trapped single quantum emitters (SQEs) in monolayer WSe2/hBN heterostructures are reported. The lifetimes of these SQEs are approximately 225 ns, more than two orders of magnitude larger than what has been previously reported for defect‐trapped excitons in WSe2. These SQEs consist of co‐linearly polarized doublet peaks with a fine structure splitting of 0.45 meV. Second‐order correlation measurements show antibunched single‐photon emission with a g(2)(0) value of ≈0.13. Through numerical analysis and modeling, it is shown how such long‐lifetime single emitters can arise from bright and dark exciton coupling in antisite defects on the W sites. Additionally, high‐quality single‐photon emission over a wide range of lifetimes—from 2 ns to over 200 ns—is also reported, suggesting a variety of other possible defect structures present. The flexibility to generate high fidelity single‐photon emission, over a wide range of lifetimes in a single material system, has potential in many optical quantum computing applications from high‐bit‐rate single‐photon sources to quantum memory devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2019
- Source ID
- 10.1002/qute.201900022
Entities
People
- Chandriker Kavir Dass
- Genevieve Clark
- Jeffrey A. Simon
- Joshua R Hendrickson
- Mahtab A. Khan
- Michael N. Leuenberger
- Ricky Gibson
- Shin Mou
- Xiaodong Xu
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- National Science Foundation
- University of Central Florida
- University of Dayton
- University of Washington