Self‐Assembled InAs/GaAs Coupled Quantum Dots for Photonic Quantum Technologies

Abstract

Coupled quantum dots (CQDs) that consist of two InAs QDs stacked along the growth direction and separated by a relatively thin tunnel barrier have been the focus of extensive research efforts. The expansion of available states enabled by the formation of delocalized molecular wavefunctions in these systems has led to significant enhancement of the already substantial capabilities of single QD systems and have proven to be a fertile platform for studying light–matter interactions, from semi‐classical to purely quantum phenomena. Observations unique to CQDs, including tunable g‐factors and radiative lifetimes, in situ control of exchange interactions, coherent phonon effects, manipulation of multiple spins, and nondestructive spin readout, along with possibilities such as quantum‐to‐quantum transduction with error correction and multipartite entanglement, open new and exciting opportunities for CQD‐based photonic quantum technologies. This review is focused on recent CQD work, highlighting aspects where CQDs provide a unique advantage and with an emphasis on results relevant to photonic quantum technologies.

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 10, 2019
Source ID
10.1002/qute.201900085

Entities

People

  • Cameron Jennings
  • Eric Stinaff
  • Matthew F Doty
  • Michael Scheibner
  • Morgan E Ware
  • Thushan Wickramasinghe
  • Xiangyu Ma

Organizations

  • Air Force Office of Scientific Research
  • Defense Advanced Research Projects Agency
  • Defense Threat Reduction Agency
  • National Science Foundation
  • Ohio University
  • University of Arkansas
  • University of California
  • University of Delaware

Tags

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots