Cathodoluminescence and transmission electron microscopy of an abrupt lateral junction in algaas grown by molecular beam epitaxy
Abstract
We present evidence for a novel type of junction, lateral to the growth direction, in AlGaAs grown by molecular beam epitaxy. Cathodoluminescence data show an abrupt change in the bandgap of AlGaAs grown in grooves on a GaAs substrate at the boundary between adjacent facets. Transmission electron microscopy of a cross section of the groove reveals an unexpected quasiperiodic compositional modulation on the (111) facets of the grooves. The transition in the bandgap occurs as a result of abrupt termination of the compositional modulation at the facet boundaries.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 1989
- Source ID
- 10.1002/sca.4950110406
Entities
People
- K. J. Vahala
- M. E. Hoenk
Organizations
- Office of Naval Research