Application of principal component analysis to a full profile correlative analysis of FTIR spectra
Abstract
We have demonstrated an informatics methodology for finding correlations between the full profile Fourier transform infrared spectra of polycrystalline 3C‐silicon carbide (poly‐SiC) films and their growth conditions, thereby developing high‐throughput structure‐process relationships. Because SiC films are a structural element in photonic sensors, this paper focuses on the interpretation of their optical response, the multivariate tracking of critical processing pathways, and the identification of controlling processing mechanisms. Using principal component analysis, we have developed a data analysis tool to aid in the assessment of the relative contributions of experimental parameters in low‐pressure chemical vapor deposition processes to optical responses on the basis of the size of eigenvalues of the spectral data set. The applied methodology for identifying spectral relationships of stoichiometry, dopant chemistry, and microstructure of poly‐SiC provides more effective guidelines to manipulate optical responses by controlling multiple experimental parameters. Copyright © 2011 John Wiley & Sons, Ltd.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 06, 2011
- Source ID
- 10.1002/sia.3813
Entities
People
- Changwon Suh
- Christopher S. Roper
- J. Provine
- Krishna Rajan
- Roger T. Howe
- Roya Maboudian
- Scott R. Broderick
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- HRL Laboratories
- Iowa State University
- Stanford University