WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
Abstract
In this paper, electrostatically configurable 2D tungsten diselenide (WSe2) electronic devices are demonstrated. Utilizing a novel triple‐gate design, a WSe2 device is able to operate as a tunneling field‐effect transistor (TFET), a metal–oxide–semiconductor field‐effect transistor (MOSFET) as well as a diode, by electrostatically tuning the channel doping to the desired profile. The implementation of scaled gate dielectric and gate electrode spacing enables higher band‐to‐band tunneling transmission with the best observed subthreshold swing (SS) among all reported homojunction TFETs on 2D materials. Self‐consistent full‐band atomistic quantum transport simulations quantitatively agree with electrical measurements of both the MOSFET and TFET and suggest that scaling gate oxide below 3 nm is necessary to achieve sub‐60 mV dec−1 SS, while further improvement can be obtained by optimizing the spacers. Diode operation is also demonstrated with the best ideality factor of 1.5, owing to the enhanced electrostatic control compared to previous reports. This research sheds light on the potential of utilizing electrostatic doping scheme for low‐power electronics and opens a path toward novel designs of field programmable mixed analog/digital circuitry for reconfigurable computing.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 25, 2019
- Source ID
- 10.1002/smll.201902770
Entities
People
- Chin-Sheng Pang
- Chin-Yi Chen
- Gerhard Klimeck
- Hesameddin Ilatikhameneh
- Rajib Rahman
- Shengjiao Zhang
- Tarek A Ameen
- Zhihong Chen
Organizations
- Defense Advanced Research Projects Agency
- National Institute of Standards and Technology
- National Science Foundation
- Purdue University
- Semiconductor Research Corporation
- University of New South Wales