Synthesis of High‐Performance Monolayer Molybdenum Disulfide at Low Temperature
Abstract
The large‐area synthesis of high‐quality MoS2 plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)‐grown MoS2 require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high‐quality monolayer MoS2 with the domain size up to 120 µm by metal‐organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low‐substrate temperature, the MOCVD‐grown MoS2 exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm2 V−1 s−1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS2 growth process via a geometric model of the MoS2 flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 19, 2021
- Source ID
- 10.1002/smtd.202000720
Entities
People
- Ang‐yu Lu
- Bong Gyu Shin
- Donhee Ham
- Haozhe Wang
- Jing Kong
- Ji‐hoon Park
- Klaus Kern
- Nannan Mao
- Pin‐chun Shen
- Renjing Xu
- Soon Jung Jung
- Yimo Han
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- Harvard University
- Massachusetts Institute of Technology
- Max Planck Institute for Solid State Research
- National Science Foundation
- National Sleep Foundation
- Office of Basic Energy Sciences
- Office of Science
- Rice University
- Swiss Federal Institute of Technology in Lausanne
- United States Department of Energy