SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4)
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 25, 2015
- Source ID
- 10.1007/s11664-015-4234-2
Entities
People
- Kevin M. Daniels
- M. V. S. Chandrashekhar
- Tangali Sudarshan
- Tawhid Rana
Organizations
- Office of Naval Research