Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 24, 2017
Source ID
10.1007/s11664-016-5262-2

Entities

People

  • A. C. Ahyi
  • C. Jiao
  • Dallas Morisette
  • R. Myers-ward
  • Shilpa S. Dhar

Organizations

  • National Science Foundation
  • United States Army Research Laboratory