Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 25, 2023
Source ID
10.1007/s11664-023-10222-2

Entities

People

  • Elaheh Ahmadi
  • Kamruzzaman Khan
  • Subhajit Mohanty
  • Zhe Jian

Organizations

  • Office of Naval Research Global