Extended Defects in SiC: Selective Etching and Raman Study
Abstract
Controlling the electrical properties of SiC requires knowledge of the nature and properties of extended defects. We have employed orthodox defect-selective etching and photo-etching methods to reveal typical and new structural defects in commercial SiC wafers. For photo-etching, the etch rate increases as the free carrier concentration decreases. The etch rate can be used to estimate the free carrier concentration with higher precision, and over a larger lateral and depth range than that accessed by Raman scattering. The logarithmic dependence of the etch rate on the free carrier concentration has been characterized.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 08, 2023
- Source ID
- 10.1007/s11664-023-10272-6
Entities
People
- A. Tiberj
- G. Nowak
- J. A. Freitas Jr.
- J.L. Weyher
- James C. Culbertson
Organizations
- Office of Naval Research