On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 01, 2021
Source ID
10.1016/j.jallcom.2021.160394

Entities

People

  • A. Y. Polyakov
  • A.a. Vasilev
  • A.i. Kochkova
  • A.v. Chernykh
  • E.b. Yakimov
  • E.e. Yakimov
  • F. Ren
  • I.v. Shchemerov
  • Minghan Xian
  • N. B. Smirnov
  • P.s. Vergeles
  • S.j. Pearton

Organizations

  • Defense Threat Reduction Agency
  • Division of Physics
  • Ministry of Education and Science of the Russian Federation
  • National Science Foundation
  • United States Department of Defense