Vapor phase surface preparation (etching) of 4H–SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 01, 2013
Source ID
10.1016/j.jcrysgro.2013.05.030

Entities

People

  • M. V. S. Chandrashekhar
  • Tangali S. Sudarshan
  • Tawhid Rana

Organizations

  • Office of Naval Research