4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth

Document Details

Document Type
Pub Defense Publication
Publication Date
Aug 01, 2016
Source ID
10.1016/j.jcrysgro.2016.05.018

Entities

People

  • Anusha Balachandran
  • Haizheng Song
  • M. V. S. Chandrashekhar
  • T.s. Sudarshan

Organizations

  • Division of Electrical, Communications & Cyber Systems
  • Office of Naval Research
  • United States Department of Energy