Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 01, 2016
Source ID
10.1016/j.jcrysgro.2016.08.047

Entities

People

  • B.p. Downey
  • D. S. Katzer
  • D.f. Storm
  • D.j. Meyer
  • David J Smith
  • John M. Cowley
  • Lin Zhou
  • M.t. Hardy
  • N. Nepal
  • Thomas O. Mcconkie

Organizations

  • Office of Naval Research