Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 01, 2018
Source ID
10.1016/j.jcrysgro.2018.07.027

Entities

People

  • A.d. Koehler
  • A.g. Jacobs
  • B.n. Feigelson
  • Edward Beam
  • J.c. Gallagher
  • Junfei Xie
  • Karl D. Hobart
  • L.e. Luna
  • T.j. Anderson

Organizations

  • Office of Naval Research
  • United States Naval Research Laboratory