Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 01, 2019
- Source ID
- 10.1016/j.jcrysgro.2019.03.020
Entities
People
- Anwar Siddique
- Edwin L. Piner
- Jonathan Anderson
- Raju Ahmed
Organizations
- Army Research Office