Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2023
Source ID
10.1016/j.jcrysgro.2022.126982

Entities

People

  • Marzieh Bakhtiary-noodeh
  • Russell D. Dupuis
  • Theeradetch Detchprohm

Organizations

  • Army Research Office
  • National Aeronautics and Space Administration
  • National Science Foundation
  • United States Department of Energy