Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 01, 2017
Source ID
10.1016/j.mee.2017.04.045

Entities

People

  • Angelica Azcatl
  • Chadwin D Young
  • Paul K. Hurley
  • Pavel Bolshakov
  • Peng Zhao
  • Robert M Wallace

Organizations

  • Defense Advanced Research Projects Agency
  • National Science Foundation