Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 01, 2021
Source ID
10.1016/j.micron.2020.102954

Entities

People

  • Aivars J. Lelis
  • Asanka Jayawardena
  • Christopher J. Klingshirn
  • Dallas Morisette
  • John Cumings
  • Lourdes Salamanca-Riba
  • Rahul P. Ramamurthy
  • Sarit Dhar
  • Tsvetanka Zheleva
  • Zoey Warecki

Organizations

  • United States Army Research Laboratory

Tags

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene