Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2017
- Source ID
- 10.1016/j.microrel.2017.02.005
Entities
People
- F. Ren
- K.s. Jones
- Li Ping
- M.r. Holzworth
- N.g. Rudawski
- P.g. Whiting
- S.j. Pearton
- T.s. Kang
Organizations
- Air Force Office of Scientific Research
- University of Florida